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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DA9062 датащи(PDF) 12 Page - Renesas Technology Corp |
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DA9062 датащи(HTML) 12 Page - Renesas Technology Corp |
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12 / 101 page  DA9062 PMIC for Applications Requiring up to 8.5 A Datasheet Revision 3.8 15-Feb-2022 CFR0011-120-00 12 of 99 © 2022 Renesas Electronics 4.1 Thermal Characteristics Table 6: QFN Package Ratings Parameter Symbol Note Typ Unit Thermal resistance junction to ambient R_JA Note 1 20.81 °C/W Thermal resistance junction to Board R_JB Note 1 5.9 °C/W Thermal resistance junction to case R_JC Note 1 18.72 °C/W Maximum power dissipation Note 1 PDISS Derating factor above TA = 70 °C: 48.05 mW/°C 3120 mW Note 1 Obtained from package thermal simulation, 76 mm x 114 mm x 1.6 mm (JEDEC), 6-layer board, 70 μm thick copper top/bottom layers, 35 μm thick copper inside layers, 49 x 0.2 mm thermal vias beneath the device, natural convection (still air). 4.1.1 Power Derating Curves Figure 3: QFN40 Power Derating Curve Table 7: Typical Temperatures TA = 70 °C TA = 85 °C TA = 105 °C TWARN PD=3.12 W PD=1.92 W PD=0.96 W TCRIT PD=2.64 W PD=2.40 W PD=1.44 W |
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