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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SPC574S60 датащи(PDF) 30 Page - STMicroelectronics |
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SPC574S60 датащи(HTML) 30 Page - STMicroelectronics |
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30 / 77 page  Electrical characteristics SPC574Sx 30/77 DS10601 Rev 6 Table 14. Slow configuration I/O output DC characteristics(1) Symbol Parameter Conditions Value Unit Min Typ Max ROH_S PMOS output impedance slow configuration 3.0 V < VDD_HV_IO <3.6 V Push pull, IOH <0.5 mA 560 800 1040 Ω 4.5 V < VDD_HV_IO <5.5 V Push pull, IOH <0.5 mA 560 800 1040 ROL_S NMOS output impedance slow configuration 3.0 V < VDD_HV_IO <3.6 V Push pull, IOL <0.5 mA 560 800 1040 Ω 4.5 V < VDD_HV_IO <5.5 V Push pull, IOL <0.5 mA 560 800 1040 fmax_S Output frequency slow configuration CL =25pF — — 2 MHz CL =50pF — — 1 tTR_S Transition time output pin slow configuration CL =25pF — — 120 ns CL =50pF — — 240 tSKEW_S Difference between rise time and fall time —— — 28 % 1. The above mentioned values are different for pads PAD[4], PAD[9], PAD[11], PAD[16], PAD[47], PAD[55], PAD[56], PAD[62] and PAD_FCCU_F1E. Please refer to Table 18 for these pads’ values. Table 15. Medium configuration I/O output DC characteristics(1) Symbol Parameter Conditions Value Unit Min Typ Max ROH_M PMOS output impedance medium configuration 3.0 V < VDD_HV_IO <3.6 V Push pull, IOH <2mA 140 200 260 Ω 4.5 V < VDD_HV_IO <5.5 V Push pull, IOH <2mA 140 200 260 ROL_M NMOS output impedance medium configuration 3.0 V < VDD_HV_IO <3.6 V Push pull, IOL <2mA 140 200 260 Ω 4.5 V < VDD_HV_IO <5.5 V Push pull, IOL <2mA 140 200 260 fmax_M Output frequency medium configuration CL =25pF — — 12 MHz CL =50pF — — 6 tTR_M Transition time output pin medium configuration CL =25pF — — 35 ns CL =50pF — — 70 tSKEW_M Difference between rise time and fall time —— — 28 % 1. The above mentioned values are different for pads PAD[4], PAD[9], PAD[11], PAD[16], PAD[47], PAD[55], PAD[56], PAD[62] and PAD_FCCU_F1E. Please refer to Table 18 for these pads’ values. |
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