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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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25CSM04T-I/MF датащи(PDF) 5 Page - Microchip Technology |
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25CSM04T-I/MF датащи(HTML) 5 Page - Microchip Technology |
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5 / 55 page  2019-2022 Microchip Technology Inc. and its subsidiares DS20005817D-page 5 25CSM04 TABLE 1-2: AC CHARACTERISTICS AC CHARACTERISTICS Industrial (I): TA = -40°C to +85°C VCC = 2.5V to 5.5V Param. No. Symbol Characteristic Minimum Maximum Units Test Conditions 1FCLK Clock Frequency —8 MHz VCC ≥ 3.0V —5 MHz VCC ≥ 2.5V 2TCSS CS Setup Time 30 — ns VCC ≥ 3.0V 60 — ns VCC ≥ 2.5V 3TCSH CS Hold Time 30 — ns VCC ≥ 3.0V 60 — ns VCC ≥ 2.5V 4TCSD CS Disable Time 30 — ns VCC ≥ 3.0V 60 — ns VCC ≥ 2.5V 5TSU Data Setup Time 10 — ns VCC ≥ 3.0V 20 — ns VCC ≥ 2.5V 6THD Data Hold Time 10 — ns VCC ≥ 3.0V 20 — ns VCC ≥ 2.5V 7TR CLK Rise Time — 50 ns Note 1 8TF CLK Fall Time — 50 ns Note 1 9THI Clock High Time 40 — ns VCC ≥ 3.0V 80 — ns VCC ≥ 2.5V 10 TLO Clock Low Time 40 — ns VCC ≥ 3.0V 80 — ns VCC ≥ 2.5V 11 TCLD Clock Delay Time 50 — ns 12 TCLE Clock Enable Time 50 — ns 13 TV Output Valid from Clock Low —40 ns VCC ≥ 3.0V —80 ns VCC ≥ 2.5V 14 THO Output Hold Time 0 — ns Note 1 15 TDIS Output Disable Time —40 ns VCC ≥ 3.0V —80 ns VCC ≥ 2.5V 16 THS HOLD Setup Time 10 — ns VCC ≥ 3.0V 20 — ns VCC ≥ 2.5V 17 THH HOLD Hold Time 10 — ns VCC ≥ 3.0V 20 — ns VCC ≥ 2.5V 18 THZ HOLD Low to Output High Z —40 ns VCC ≥ 3.0V (Note 1) —80 ns VCC ≥ 2.5V (Note 1) 19 THV HOLD High to Output Valid —40 ns VCC ≥ 3.0V —80 ns VCC ≥ 2.5V 20 TWC Internal Write Cycle Time — 5 ms Note 2 Note 1: This parameter is not tested but ensured by characterization. 2: TWC begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is complete. |
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