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25CSM04T-I/MF датащи(PDF) 25 Page - Microchip Technology

номер детали 25CSM04T-I/MF
подробное описание детали  4-Mbit SPI Serial EEPROM with 128-Bit Serial Number and Enhanced Write Protection
PDF  55 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

25CSM04T-I/MF датащи(HTML) 25 Page - Microchip Technology

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DS20005817D-page 25
25CSM04
6.3
Write STATUS Register (WRSR)
The Write STATUS Register (WRSR) instruction enables
the SPI host to change selected bits of the STATUS
register. Before a WRSR sequence can be initiated, a
WREN instruction must be executed to set the WEL bit
to logic ‘1’. Upon completion of a WREN instruction, a
WRSR sequence can be executed.
The WRSR instruction will only modify:
• Byte 0: bit 7, bit 3 and bit 2
• Byte 1: bit 7
These modifiable bits are the Write-Protect Enable
(WPEN) bit, the Block Protect (BP1, BP0) bits and the
Write Protection Mode (WPM) bit.
These four bits are nonvolatile cells that have the same
properties and functions as regular EEPROM cells.
Their values are retained while power is removed from
the device. While FMPC (byte 1, bit 5) and PABP
(byte 1, bit 3) of the STATUS register are also
nonvolatile bits, they are modified through dedicated
instructions. Refer to Section 6.1.7 “Freeze Memory
Protection Configuration Bit” and Section 10.1.3
“Protecting the Partition Endpoint Addresses” for
more details about these requirements.
When writing to the STATUS register, byte 0 must
always be written. Byte 1 can optionally be written to
utilize Enhanced Write Protection mode.
The 25CSM04 will not respond to instructions other
than a RDSR or a WRBP after a WRSR sequence until
the self-timed internal write cycle has completed. When
the write cycle has completed, the WEL bit in the
STATUS register is reset to a logic ‘0’.
FIGURE 6-3:
WRITE STATUS REGISTER (WRSR) SEQUENCE
Note:
If the CS pin is deasserted at somewhere
other than the end of an 8-bit byte
boundary, the sequence will be aborted
and no write cycle will take place.
SI
9 1011
1415
SCK
0
2
3
4
5
6
7
1
8
12 13
16 17 18 19 20 21 22 23
SO
CS
High-Impedance
0 0 0 0 000 1 D7 XX X D3 D2 XX D7 XX X X XX X
WRSR Opcode
STATUS Register Byte
STATUS Register Byte
MSb
MSb
MSb
TWC(1)
Note 1: This sequence initiates a self-timed internal write cycle on the rising edge of CS after a valid sequence.
Optional



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