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25CSM04 датащи(PDF) 27 Page - Microchip Technology

номер детали 25CSM04
подробное описание детали  4-Mbit SPI Serial EEPROM with 128-Bit Serial Number and Enhanced Write Protection
PDF  55 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

25CSM04 датащи(HTML) 27 Page - Microchip Technology

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DS20005817D-page 27
25CSM04
8.0
WRITE SEQUENCES
In order to program the EEPROM in the 25CSM04, the
device must be write-enabled via the Write Enable
instruction (WREN). If the device is not write-enabled,
the device will ignore the WRITE instruction and will
return to the Standby state when CS is brought high.
The address of the memory location(s) to be
programmed must be outside the protected address
range(s) selected by the Block Write Protection level or
the contents of the various Memory Partition registers.
During an internal write cycle, all instructions will be
ignored except the RDSR and the WRBP instructions.
8.1
Write Instruction Sequences
8.1.1
BYTE WRITE
Once a WREN instruction has been completed, a byte
write sequence can be performed as shown in
Figure 8-1. After the CS line is pulled low to select the
device, the WRITE (02h) instruction is transmitted via
the SI line followed by the 24-bit address and the data
(D7-D0) to be programmed.
Address bits A23 through A19 are “don’t care” bits
because they do not fall within the addressable
memory range.
Programming will start after the CS pin is brought high.
The low-to-high transition of the CS pin must occur
during the SCK low time (mode 0) and SCK high time
(mode 3) immediately after clocking in the D0 (LSB)
data bit.
The 25CSM04 is automatically returned to the Write
Disable state (STATUS register bit WEL = 0) at the
completion of a write cycle.
FIGURE 8-1:
BYTE WRITE SEQUENCE
8.1.2
PAGE WRITE
A page write sequence is the same as a byte write,
however allowing up to 256 bytes to be written in the
same write cycle, provided that all bytes are in the
same page of the memory array (where addresses A18
through A8 are the same). Partial page writes of less
than 256 bytes are allowed. After each byte of data is
received, the eight lowest order address bits are
internally incremented by one and the remaining
address bits will remain constant.
If more bytes of data are transmitted than what will fit to
the end of that memory page, the address counter will
“rollover” to the beginning of the same page and only
the last 256 bytes of data received will be written to the
device.
Upon completion of a write cycle, the 25CSM04
automatically returns to the Write Disable state
(STATUS register bit WEL = 0).
Note:
If the CS pin is deasserted at somewhere
other than the end of an 8-bit byte
boundary, the sequence will be aborted
and no write cycle will take place.
CS
SCK
1
0
234
56 7
9 10 11 12
39
38
37
36
35
34
32
31
30
29
SO
High-Impedance
00 0 0 0 0
1 0
WRITE Opcode (02h)
Address Bits A23-A0
X XXX X A
SI
D7 D6 D5 D4 D3 D2 D1 D0
Data In
MSb
MSb
MSb
AA A
A
833
Note 1:
This sequence initiates a self-timed internal write cycle on the rising edge of CS after a valid sequence.
TWC(1)
Note:
If the CS pin is deasserted at somewhere
other than the end of an 8-bit byte
boundary, the sequence will be aborted
and no write cycle will take place.



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