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SPC582BX датащи(PDF) 22 Page - STMicroelectronics |
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SPC582BX датащи(HTML) 22 Page - STMicroelectronics |
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22 / 115 page ![]() Electrical characteristics SPC582Bx 22/115 DS11597 Rev 4 4.7 Device consumption Table 8. Device consumption Symbol C Parameter Conditions Value(1) Unit Min Typ Max IDD_LKG(2),(3) CC C Leakage current on the VDD_LV supply TJ =40 °C — — 2 mA DTJ = 25 °C — 0.65 1 DTJ =55 °C — — 2.5 DTJ =95 °C — — 6 DTJ = 120 °C — — 14 PTJ = 150 °C — — 35 IDD_LV(3) CC P Dynamic current on the VDD_LV supply, very high consumption profile(4) —— — 50 mA IDD_HV CC P Total current on the VDD_HV supply(4) fMAX —— 37 mA IDD_LV_GW CC T Dynamic current on the VDD_LV supply, gateway profile(5) —— — 48 mA IDD_HV_GW CC T Dynamic current on the VDD_HV supply, gateway profile(5) —— — 17 mA IDDHALT(6) CC T Dynamic current on the VDD_LV supply +Total current on the VDD_HV supply — — 26 37 mA IDDSTOP(7) CC T Dynamic current on the VDD_LV supply +Total current on the VDD_HV supply —— 6.5 9 mA IDDSTBY8 CC D Total standby mode current on VDD_LV and VDD_HV supply, 8 KB RAM(8) TJ = 25 °C — 40 90 µA CTJ = 40 °C — — 135 DTJ = 55 °C — — 210 DTJ = 120 °C — — 1.2 mA PTJ = 150 °C — — 2.5 IDDSTBY64 CC D Total standby mode current on VDD_LV and VDD_HV supply, 64 KB RAM(8) TJ = 25 °C — 55 125 µA CTJ = 40 °C — — 190 DTJ = 55 °C — — 290 DTJ = 120 °C — — 1.6 mA PTJ = 150 °C — — 3.5 1. The ranges in this table are design targets and actual data may vary in the given range. |
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