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SPC582BX датащи(PDF) 46 Page - STMicroelectronics |
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SPC582BX датащи(HTML) 46 Page - STMicroelectronics |
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46 / 115 page ![]() Electrical characteristics SPC582Bx 46/115 DS11597 Rev 4 4.12.2 SAR ADC 12 bit electrical specification The SARn ADCs are 12-bit Successive Approximation Register analog-to-digital converters with full capacitive DAC. The SARn architecture allows input channel multiplexing. Note: The functional operating conditions are given in the DC electrical specifications. Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the listed maximum may affect device reliability or cause permanent damage to the device. CS CC D SAR ADC sampling capacitance — — 5 pF RSWn CC D Analog switches resistance — 0 1.8 k Ω RAD CC D ADC input analog switches resistance SARn 12-bit — 0.8 k Ω RCMSW CC D Common mode switch resistance Sum of the two resistances —9 k Ω RCMRL CC D Common mode resistive ladder k Ω RSAFEPD(1) CC D Discharge resistance for ADC input-only pins (strong pull-down for safety) VDD_HV_IO = 5.0 V ± 10% — 300 W VDD_HV_IO = 3.3 V ± 10% — 500 W CEXT SR — External capacitance at the pad input pin To preserve the accuracy of the ADC, it is necessary that analog input pins have low AC impedance. Placing a capacitor with good high frequency characteristics at the input pin of the device can be effective: the capacitor should be as large as possible. This capacitor contributes to attenuating the noise present on the input pin. The impedance relative to the signal source can limit the ADC’s sample rate. 1. It enables discharge of up to 100 nF from 5 V every 300 ms. Refer to the device pinout Microsoft Excel file attached to the IO_Definition document for the pads supporting it. Table 24. ADC pin specification (continued) Symbol C Parameter Conditions Value Unit Min Max Table 25. SARn ADC electrical specification Symbol C Parameter Conditions Value Unit Min Max fADCK SR P Clock frequency Standard frequency mode 7.5 13.33 MHz T High frequency mode >13.33 16.0 tADCINIT SR — ADC initialization time — 1.5 — µs tADCBIASINIT SR — ADC BIAS initialization time —5 — µs tADCPRECH SR T ADC decharge time Fast channel 1/fADCK — µs Standard channel 2/fADCK — |
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