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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32G070CB датащи(PDF) 43 Page - STMicroelectronics |
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STM32G070CB датащи(HTML) 43 Page - STMicroelectronics |
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43 / 93 page  DS12766 Rev 2 43/93 STM32G070CB/KB/RB Electrical characteristics 80 5.3 Operating conditions 5.3.1 General operating conditions 5.3.2 Operating conditions at power-up / power-down The parameters given in Table 21 are derived from tests performed under the ambient temperature condition summarized in Table 20. 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 22 are derived from tests performed under the ambient temperature conditions summarized in Table 20. Table 19. Thermal characteristics Symbol Ratings Value Unit TSTG Storage temperature range –65 to +150 °C TJ Maximum junction temperature 150 °C Table 20. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 64 MHz fPCLK Internal APB clock frequency - 0 64 VDD/DDA Supply voltage - 2.0(1) 3.6 V VBAT Backup operating voltage - 1.55 3.6 V VIN I/O input voltage - -0.3 Min(VDD + 3.6, 5.5)(2) V TA Ambient temperature(3) - -40 85 °C TJ Junction temperature - -40 105 °C 1. When RESET is released functionality is guaranteed down to VPDR min. 2. For operation with voltage higher than VDD +0.3 V, the internal pull-up and pull-down resistors must be disabled. 3. The TA(max) applies to PD(max). At PD < PD(max) the ambient temperature is allowed to go higher than TA(max) provided that the junction temperature TJ does not exceed TJ(max). Refer to Section 6.4: Thermal characteristics. Table 21. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD slew rate VDD rising - ∞ µs/V VDD falling 10 ∞ |
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