STM32G070CB datasheet(48/93 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32G070CB/KB/RB

48/93

DS12766 Rev 2

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.

I/O static current consumption

All the I/Os used as inputs with pull-up generate current consumption when the pin is

externally held low. The value of this current consumption can be simply computed by using

the pull-up/pull-down resistors values given in Table 47: I/O static characteristics.

For the output pins, any external pull-down or external load must also be considered to

estimate the current consumption.

Additional I/O current consumption is due to I/Os configured as inputs if an intermediate

voltage level is externally applied. This current consumption is caused by the input Schmitt

trigger circuits used to discriminate the input value. Unless this specific configuration is

required by the application, this supply current consumption can be avoided by configuring

these I/Os in analog mode. This is notably the case of ADC input pins which should be

configured as analog inputs.

Caution:

Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,

as a result of external electromagnetic noise. To avoid current consumption related to

floating pins, they must either be configured in analog mode, or forced internally to a definite

digital value. This can be done either by using pull-up/down resistors or by configuring the

pins in output mode.

1. Flash memory not powered.

2. Based on characterization results, not tested in production.

Table 28. Current consumption in Standby mode

Symbol

Parameter

Conditions

Typ

Max(1)

Unit

General

VDD

25 °C

85 °C

25 °C

85 °C

IDD(Standby)

Supply current in

Standby mode

RTC disabled

2.4 V

1.0

2.2

2.7

µA

3.0 V

1.2

2.6

3.5

3.6 V

1.4

3.2

4.1

RTC enabled,

clocked by LSI

2.4 V

1.5

2.8

3.5

3.0 V

1.8

3.3

4.6

3.6 V

2.2

4.1

6.4

1. Based on characterization results, not tested in production.

Table 29. Current consumption in VBAT mode

Symbol

Parameter

Conditions

Typ

Unit

RTC

VBAT

25 °C

85 °C

IDD_VBAT

Supply current in

VBAT mode

Enabled, clocked by

LSE bypass at

32.768 kHz

2.4 V

286

391

3.0 V

402

523

3.6 V

556

721

Enabled, clocked by

LSE crystal at

32.768 kHz

2.4 V

407

528

3.0 V

517

660

3.6 V

660

897

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