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AT25QL641 датащи(PDF) 36 Page - Dialog Semiconductor

номер детали AT25QL641
подробное описание детали  64-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
PDF  77 Pages
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производитель  DIALOG [Dialog Semiconductor]
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AT25QL641 датащи(HTML) 36 Page - Dialog Semiconductor

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AT25QL641
DS-25QL641–130E–10/2018
Figure 7-29. 32KB Block Erase Instruction (QPI Mode)
7.19
64 Kbyte Block Erase (D8h)
The 64 KB ‘Block Erase’ instruction is to erase a 64 Kbyte block of memory. Prior to the Block Erase Instruction, a
‘Write Enable’ (06h) instruction must be issued. The instruction is initiated by driving the CS pin low and shifting the
instruction code “D8h” followed a 24-bit block address (A23-A0). Refer to Figure 7-30 and Figure 7-31 below. The CS
pin must go high after the eighth bit of the last byte has been latched in, otherwise, the Block Erase instruction is not
executed. After CS is driven high, the self-timed Block Erase instruction commences for a time duration of t
BE2 (see Table
8-7, AC Electrical Characteristics
).
While the block erase operation is in progress, the ‘Read Status Register’ (05h) instruction may still be used to read
the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. When the BUSY bit is asserted, the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0.
Figure 7-30. 64KB Block Erase Instruction (SPI Mode)



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