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AM29N323D датащи(PDF) 13 Page - Advanced Micro Devices

номер детали AM29N323D
подробное описание детали  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  48 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29N323D датащи(HTML) 13 Page - Advanced Micro Devices

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Am29N323D
August 8, 2002
■ When WP# is at VIL, the two outermost sectors are
locked.
■ When VPP is at VIL, all sectors are locked.
The following hardware data protection measures pre-
vent accidental erasure or programming, which might
otherwise be caused by spurious system level signals
during VCC power-up and power-down transitions, or
from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not ac-
cept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets to reading array data. Subse-
quent writes are ignored until VCC is greater than
VLKO. The system must provide the proper signals to
the control inputs to prevent unintentional writes when
VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.



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