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AM29N323D датащи(PDF) 27 Page - Advanced Micro Devices

номер детали AM29N323D
подробное описание детали  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  48 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29N323D датащи(HTML) 27 Page - Advanced Micro Devices

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26
Am29N323D
August 8, 2002
DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. Eight I/Os switching.
3. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3.
6. Total current during accelerated programming is the sum of VPP and VCC currents.
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
µA
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
µA
ICCB
VCC Active Burst Read Current
(Note 2)
CE# = VIL, OE# = VIL
25
30
mA
ICC1
VCC Active Asynchronous Read
Current (Note 3)
CE# = VIL, OE# = VIH
5 MHz
10
16
mA
1 MHz
2
4
mA
ICC2
VCC Active Write Current (Note 4)
CE# = VIL, OE# = VIH, VPP = VIH
15
40
mA
ICC3
VCC Standby Current (Note 5)
CE# = VIH, RESET# = VIH
0.2
10
µA
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
0.2
10
µA
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIL
40
60
mA
IPP
Accelerated Program Current
(Note 6)
CE# = VIL, OE# = VIH,
VPP = 12.0 ± 0.5 V
VPP
715
mA
VCC
510
mA
VIL
Input Low Voltage
–0.5
0.2
V
VIH
Input High Voltage
VCC – 0.2
VCC + 0.2
V
VOL
Output Low Voltage
IOL = 100 µA, VCC = VCC min
0.1
V
VOH
Output High Voltage
IOH = –100 µA, VCC = VCC min
VCC – 0.1
V
VID
Voltage for Accelerated Program
11.5
12.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V



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