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AM29N323D датащи(PDF) 18 Page - Advanced Micro Devices

номер детали AM29N323D
подробное описание детали  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  48 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29N323D датащи(HTML) 18 Page - Advanced Micro Devices

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August 8, 2002
Am29N323D
17
bank address and the data 90h. The second cycle
need only contain the data 00h. The bank then returns
to the read mode.
The device offers accelerated program operations
through VPP. When the system asserts VID on this
input, the device automatically enters the Unlock
Bypass mode. The system may then write the
two- cy cle Unloc k Bypas s pr og r a m comman d
sequence. The device uses the higher voltage on the
VPP input to accelerate the operation. Note that sectors
must be unlocked using the Sector Lock/Unlock
command sequence prior to raising VPP to VID.
Figure 1 illustrates the algorithm for the program oper-
ation. Refer to the Erase/Program Operations table in
the AC Characteristics section for parameters, and
Figure 12 for timing diagrams.
Figure 1.
Program Operation
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note: See Table 4 for program command sequence.



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