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LPC5410X датащи(PDF) 57 Page - NXP Semiconductors

номер детали LPC5410X
подробное описание детали  32-bit ARM Cortex-M4/M0 MCU; 104 kB SRAM; 512 kB flash, 3 x I2C, 2 x SPI, 4 x USART, 32-bit counter/ timers, SCTimer/PWM, 12-bit 5.0 Msamples/sec ADC
PDF  95 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC5410X датащи(HTML) 57 Page - NXP Semiconductors

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LPC5410x
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2019. All rights reserved.
Product data sheet
Rev. 2.11 — 19 September 2019
57 of 95
NXP Semiconductors
LPC5410x
32-bit ARM Cortex-M4/M0+ microcontroller
11. Dynamic characteristics
11.1 Power-up ramp conditions
[1]
See Figure 19.
[2]
Based on simulation. The wait time specifies the time the power supply must be at levels below 200 mV
before ramping up.
[3]
Based on characterization, not tested in production.
11.2 Flash memory
Table 17.
Power-up characteristics
Tamb = 40 C to +105 C; 1.62 V  VDD  3.6 V
Symbol Parameter
Conditions
Min
Typ
Max
Unit
tr
rise time
at t = t1: 0 < VI 200 mV
[1][3] 0
-
500
ms
twait
wait time
[1][2] 12
-
-
s
VI
input voltage
at t = t1 on pin VDD
[3] 0
-
200
mV
Condition: 0 < VI 200 mV at start of power-up (t = t1)
Fig 19. Power-up ramp
VDD
0
200 mV
tr
twait
t = t1
aaa-017426
Table 18.
Flash characteristics
Tamb = 40 C to +105 C, unless otherwise specified. 1.62 V  VDD  3.6 V
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Nendu
endurance
sector erase/program
[1] 10000
-
-
cycles
page erase/program; page
in a sector
1000
-
-
cycles
tret
retention time powered
10
-
-
years
unpowered
10
-
-
years
ter
erase time
page, sector, or multiple
consecutive sectors
-
100
-
ms
tprog
programming
time
[2] -1
-
ms



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