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TLE75620-EST датащи(PDF) 46 Page - Infineon Technologies AG |
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TLE75620-EST датащи(HTML) 46 Page - Infineon Technologies AG |
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46 / 81 page ![]() Datasheet 46 Rev. 1.0 2017-11-23 TLE75620-EST SPIDER+ 12V Protection Functions 8.6 Electrical Characteristics Protection Table 11 Electrical Characteristics Protection VDD = 3 V to 5.5 V, VS = 7 V to 18 V, TJ = -40 °C to +150 °C (unless otherwise specified) Typical values: VDD = 5 V, VS = 13.5 V, TJ = 25 °C Parameter Symbol Values Unit Note or Test Condition Number Min. Typ. Max. Over Load Over Load detection current IL(OVL0) 1.3 1.7 2.3 A TJ = -40 °C P_8.8.19 Over Load detection current IL(OVL0) 1.25 1.55 2.3 A 1) TJ = 25 °C P_8.8.20 Over Load detection current IL(OVL0) 11.45 2 A TJ = 150 °C P_8.8.21 Over Load detection current IL(OVL1) 0.7 0.95 1.3 A TJ = -40 °C P_8.8.22 Over Load detection current IL(OVL1) 0.65 0.85 1.3 A 1) TJ = 25 °C P_8.8.23 Over Load detection current IL(OVL1) 0.5 0.8 1.25 A TJ = 150 °C P_8.8.24 Over Load threshold switch delay time tOVLIN 110 170 260 µs 1) P_8.8.5 Over Load shut-down delay time tOFF(OVL) 47 11 µs 1) BIM.OUTn=HWCR .PAR=0B P_8.8.26 Over Temperature and Over Voltage Thermal shut-down temperature TJ(SC) 150 1751) 2201) °C P_8.8.7 Over voltage protection VS(AZ) 42 50 60 V IVS = 10 mA Sleep mode P_8.8.8 Reverse Polarity Drain Source diode during reverse polarity (auto-configurablechannels used as Low-Side switches) VDS(REV) – 800 – mV 1) IL = -10 mA TJ = 25 °C Sleep mode P_8.8.9 Drain Source diode during reverse polarity (auto-configurablechannels used as Low-Side switches) VDS(REV) – 650 – mV IL = -10 mA TJ = 150 °C Sleep mode P_8.8.10 On-State Resistance during Reverse Polarity (High-Side channels and auto-configurable channels used as High-Side switches) RDS(REV) –1.0 – Ω 1) VS = -VS(REV) IL = IL(EAR) TJ = 25 °C P_8.8.11 |
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