| поискавой системы для электроныых деталей |
|
LPC81xM датащи(PDF) 46 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
LPC81xM датащи(HTML) 46 Page - NXP Semiconductors |
|
46 / 78 page ![]() LPC81XM All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2018. All rights reserved. Product data sheet Rev. 4.6 — 4 April 2018 46 of 78 NXP Semiconductors LPC81xM 32-bit ARM Cortex-M0+ microcontroller 12. Dynamic characteristics 12.1 Power-up ramp conditions [1] See Figure 28. [2] The wait time specifies the time the power supply must be at levels below 200 mV before ramping up. See the LPC81x errata sheet. [3] Based on characterization, not tested in production. 12.2 Flash memory Table 11. Power-up characteristics Tamb = 40 C to +105 C; 1.8 V VDD 3.6 V Symbol Parameter Conditions Min Typ Max Unit tr rise time at t = t1: 0 < VI 200 mV [1][3] 0- 500 ms twait wait time [1][2][3] 12 - - s VI input voltage at t = t1 on pin VDD [3] 0 - 200 mV Condition: 0 < VI 200 mV at start of power-up (t = t1) Fig 28. Power-up ramp VDD 0 200 mV tr twait t = t1 aaa-017426 Table 12. Flash characteristics Tamb = 40 C to +105 C. Based on JEDEC NVM qualification. Failure rate < 10 ppm for parts as specified below. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 10000 100000 - cycles |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |