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LPC81xM датащи(PDF) 32 Page - NXP Semiconductors

номер детали LPC81xM
подробное описание детали  32-bit ARM짰 Cortex짰-M0 microcontroller
PDF  78 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

LPC81xM датащи(HTML) 32 Page - NXP Semiconductors

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LPC81XM
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet
Rev. 4.6 — 4 April 2018
32 of 78
NXP Semiconductors
LPC81xM
32-bit ARM Cortex-M0+ microcontroller
10. Thermal characteristics
The average chip junction temperature, Tj (C), can be calculated using the following
equation:
(1)
Tamb = ambient temperature (C),
Rth(j-a) = the package junction-to-ambient thermal resistance (C/W)
PD = sum of internal and I/O power dissipation
The internal power dissipation is the product of IDD and VDD. The I/O power dissipation of
the I/O pins is often small and many times can be negligible. However it can be significant
in some applications.
Table 8.
Thermal resistance
Symbol Parameter
Conditions
Max/Min
Unit
DIP8
Rth(j-a)
thermal resistance from
junction to ambient
JEDEC (4.5 in
 4 in); still air
60 ± 15 %
C/W
Single-layer (4.5 in
 3 in); still air 81 ± 15 % C/W
Rth(j-c)
thermal resistance from
junction to case
38 ± 15 %
C/W
TSSOP16
Rth(j-a)
thermal resistance from
junction to ambient
JEDEC (4.5 in
 4 in); still air
133 ± 15 %
C/W
Single-layer (4.5 in
 3 in); still air 182 ± 15 % C/W
Rth(j-c)
thermal resistance from
junction to case
33 ± 15 %
C/W
TSSOP20
Rth(j-a)
thermal resistance from
junction to ambient
JEDEC (4.5 in
 4 in); still air
110 ± 15 %
C/W
Single-layer (4.5 in
 3 in); still air 153 ± 15 % C/W
Rth(j-c)
thermal resistance from
junction to case
23 ± 15 %
C/W
SO20
Rth(j-a)
thermal resistance from
junction to ambient
JEDEC (4.5 in
 4 in); still air
87 ± 15 %
C/W
Single-layer (4.5 in
 3 in); still air 112 ± 15 % C/W
Rth(j-c)
thermal resistance from
junction to case
50 ± 15 %
C/W
XSON16
Rth(j-a)
thermal resistance from
junction to ambient
JEDEC (4.5 in
 4 in); still air
92 ± 15 %
C/W
Single-layer (4.5 in
 3 in); still air 180 ± 15 % C/W
Rth(j-c)
thermal resistance from
junction to case
27 ± 15 %
C/W
T
j
T
amb
P
D
R
th j
a


+
=



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