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HT32F22366 датащи(PDF) 36 Page - Holtek Semiconductor Inc |
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HT32F22366 датащи(HTML) 36 Page - Holtek Semiconductor Inc |
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36 / 56 page ![]() Rev. 1.00 36 of 56 �ove��e� 0�� �01� 3�-Bit A��® Co�tex®-M3 MCU HT3�F1�365/HT3�F1�366/HT3�F��366 Reset and Supply Monitor Characteristics Table 9. VDD Power Reset Characteristics TA = �5 °C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit VPOR Powe� on �eset th�eshold (Rising Voltage on VDD) TA = -40 °C ~ 85 °C 1.66 1.�9 1.90 V VPDR Powe� down �eset th�eshold (Falling Voltage on VDD) 1.49 1.64 1.�8 V VPORHYST POR hyste�esis — — 150 — �V TPOR Reset delay ti�e VDD = 3.3 V — 0.1 0.� �s �ote: 1. Data �ased on cha�acte�ization �esults only� not tested in p�oduction. �. Gua�anteed �y design� not tested in p�oduction. 3. If the LDO will �e tu�n on� the VDD POR has to �e in the de-asse�tion condition. When the VDD POR is in the asse�tion state then the LDO will �e tu�n off. Table 10. LVD/BOD Characteristics TA = �5 °C, unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Unit VBOD Voltage of B�own Out Detection TA = -40 °C ~ 85 °C Afte� facto�y-t�i��ed (VDD Falling edge) �.0� �.1 �.18 V VLVD Voltage of Low Voltage Detection TA = -40 °C ~ 85 °C (VDD Falling edge) LVDS = 000 �.1� �.�5 �.33 V LVDS = 001 �.3� �.4 �.48 V LVDS = 010 �.4� �.55 �.63 V LVDS = 011 �.6� �.� �.�8 V LVDS = 100 �.�� �.85 �.93 V LVDS = 101 �.9� 3.0 3.08 V LVDS = 110 3.0� 3.15 3.�3 V LVDS = 111 3.�� 3.3 3.38 V VLVDHTST LVD hyste�esis VDD = 3.3 V — — 100 — �V TSULVD LVD Setup ti�e VDD = 3.3 V — — — 5 μs TatLVD LVD active delay ti�e VDD = 3.3 V — — — — μs IDDLVD Ope�ation cu��ent (3) VDD = 3.3 V — — 5 15 μA �ote: 1. Data �ased on cha�acte�ization �esults only� not tested in p�oduction. �. Gua�anteed �y design� not tested in p�oduction. 3. Bandgap cu��ent is not included. 4. LVDS field is in PWRCU LVDCSR register. |
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