Features
• Maximum junction temperature: TJ = 175 °C
• Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A
• Tight parameter distribution
• Low thermal resistance
• Short-circuit rated
• Soft and fast recovery antiparallel diode

Applications
• Industrial motor control
• Dishwashers
• Refrigerators and freezers
• Fans

Description
This device is an IGBT developed using an advanced proprietary trench gate
field-stop structure. This device is part of the H series of IGBTs, which represent
an optimum compromise between conduction and switching losses to maximize
the efficiency of high switching frequency converters. Moreover, a slightly positive
VCE(sat) temperature coefficient and very tight parameter distribution result in safer
paralleling operation.