STGD4H60DF datasheet(3/18 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC= 1 A

1.1

VGE = 15 V, IC= 3 A

1.5

1.95

VGE = 15 V, IC = 3 A, TJ = 125 °C

1.6

VGE = 15 V, IC = 3 A, TJ = 175 °C

1.7

VGE = 15 V, IC = 4 A

1.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 μA

ICES

Collector cut-off current

VCE = 600 V , VGE = 0 V

μA

IGES

Gate-emitter leakage current

VGE = ±20 V , VCE = 0 V

±250

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

461

Coes

Output capacitance

Cres

Reverse transfer capacitance

Total gate charge

VCC = 480 V, IC = 3 A, VGE = 0 to 15 V

(see Figure 27. Gate charge test circuit)

Qge

Gate-emitter charge

Qgc

Gate-collector charge

Table 5. Switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 3 A,

RG = 47 Ω, VGE = 15 V

(see Figure 26. Test circuit for inductive

load switching and Figure 28. Switching

waveform)

Current rise time

td(off)

Turn-off delay time

121

Current fall time

111

td(on)

Turn-on delay time

VCE = 400 V, IC = 3 A,

RG = 47 Ω, VGE = 15 V, TJ = 175 °C

(see Figure 26. Test circuit for inductive

load switching and Figure 28. Switching

waveform)

Current rise time

td(off)

Turn-off delay time

170

Current fall time

180

tsc

Short-circuit withstand time

VCC ≤ 360 V, VGE = 15 V, RG = 47 Ω

μs

STGD4H60DF

Electrical characteristics

DS13901 - Rev 2

page 3/18

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