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STGD4H60DF датащи(PDF) 8 Page - STMicroelectronics

номер детали STGD4H60DF
подробное описание детали  Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD4H60DF датащи(HTML) 8 Page - STMicroelectronics

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Figure 19. Switching times vs gate resistance
GADG180120220844STR
RG (Ω)
td(off)
102
101
0
100
200
300
t
(ns)
VGE = 15 V, TJ= 175
℃
IC = 3 A
td(on)
tr
tf
Figure 20. Reverse recovery current vs diode current
slope
GADG170120221018RRC
7
5
3
1
0
200
400
600
800
Irrm
(A)
di/dt (A/µs)
IF = 3 A,
Figure 21. Reverse recovery time vs diode current slope
GADG170120221017RRT
125
100
75
50
0
200
400
600
800
trr
(ns)
di/dt (A/µs)
IF = 3 A,
Figure 22. Reverse recovery charge vs diode current
slope
GADG170120221019RRQ
230
220
210
200
190
180
0
200
400
600
800
Qrr
(µC)
di/dt (A/µs)
IF = 3 A,
Figure 23. Reverse recovery energy vs diode current slope
GADG170120221020RRE
45
42
39
36
33
30
0
200
400
600
800
Err
(μJ)
di/dt (A/µs)
IF = 3 A,
STGD4H60DF
Electrical characteristics (curves)
DS13901 - Rev 2
page 8/18



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