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STGD4H60DF датащи(PDF) 4 Page - STMicroelectronics |
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STGD4H60DF датащи(HTML) 4 Page - STMicroelectronics |
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4 / 18 page ![]() Table 6. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon(1) Turn-on switching energy VCE = 400 V, IC = 3 A, RG = 47 Ω, VGE = 15 V - 68 - μJ Eoff (2) Turn-off switching energy 45 Ets Total switching energy 113 Eon(1) Turn-on switching energy VCE = 400 V, IC = 3 A, RG = 47 Ω, VGE = 15 V, TJ = 175 °C 105 Eoff(2) Turn-off switching energy 92 Ets Total switching energy 197 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 7. Collector-emitter diode Symbol Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 1 A 1.3 V IF = 3 A - 1.75 - IF = 3 A, TJ = 175 °C 1.3 IF = 4 A 1.85 trr Reverse recovery time VCC = 400 V; IF = 3 A; diF/dt = 160 A / μs - 73 - ns Qrr Reverse recovery charge 66 nC Irrm Reverse recovery current 2.3 A Err Reverse recovery energy 9.9 μJ trr Reverse recovery time VCC = 400 V; IF = 3 A; diF/dt = 160 A / μs, TJ = 175 °C 118 ns Qrr Reverse recovery charge 206 nC Irrm Reverse recovery current 3.9 A Err Reverse recovery energy 41 μJ STGD4H60DF Electrical characteristics DS13901 - Rev 2 page 4/18 |
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