Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.

Features
• 6 µs of short-circuit withstand time
• VCE(sat) = 1.6 V (typ.) @ IC = 4 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and very fast recovery antiparallel diode

Applications
• Motor control
• UPS
• PFC