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STGD4H60DF датащи(PDF) 7 Page - STMicroelectronics

номер детали STGD4H60DF
подробное описание детали  Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD4H60DF датащи(HTML) 7 Page - STMicroelectronics

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Figure 13. Gate charge vs. gate-emitter voltage
GADG170120221011GCGE
15
12
9
6
3
0
0
10
20
30
VGE
(V)
Qg (nC)
VCC = 480 V, IC = 3 A, IG = 5 mA
Figure 14. Switching energy vs collector current
GADG170120221011SLC
0.24
0.18
0.12
0.06
0.00
0
3
6
E
(mJ)
IC (A)
Eon
Eoff
VGE = 15 V, TJ= 175
℃
Figure 15. Switching energy vs gate resistance
GADG170120221013SLG
0.17
0.14
0.11
0.08
0
100
200
300
E
(mJ)
RG (Ω)
Eon
Eoff
IC = 3 A VCC = 400 V
VGE = 15 V, TJ= 175
℃
Figure 16. Switching energy vs temperature
GADG170120221012SLT
0.10
0.08
0.06
0.04
0.02
0
50
100
150
E
(mJ)
TJ (°C)
Eon
Eoff
IC = 3 A,
VGE = 15 V
Figure 17. Switching energy vs collector-emitter voltage
GADG170120221012SLV
0.12
0.10
0.08
0.06
250
350
450
E
(mJ)
VCE (V)
Eon
Eoff
IC = 3 A
VGE = 15 V, TJ= 175
℃
Figure 18. Switching times vs collector current
GADG170120221014STC
10 2
10 1
0
3
6
t
(ns)
IC (A)
tr
td(off)
tf
td(on)
VGE = 15 V, TJ= 175
℃
STGD4H60DF
Electrical characteristics (curves)
DS13901 - Rev 2
page 7/18



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