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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STGD4H60DF датащи(PDF) 2 Page - STMicroelectronics |
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STGD4H60DF датащи(HTML) 2 Page - STMicroelectronics |
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2 / 18 page  1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 600 V IC Continuous collector current at TC = 25 °C 8 A Continuous collector current at TC = 100 °C 4 ICP(1) Pulsed collector current 16 A VGE Gate-emitter voltage ±20 V IF Continuous forward current TC = 25 °C 8 A Continuous forward current at TC = 100 °C 4 IFP(1) Pulsed forward current 16 A PTOT Total power dissipation at TC = 25 °C 75 W TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case, IGBT 2 °C/W RthJC Thermal resistance, junction-to-case, diode 4.5 °C/W RthJA Thermal resistance, junction-to-ambient 100 °C/W STGD4H60DF Electrical ratings DS13901 - Rev 2 page 2/18 |
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