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STGD4H60DF датащи(PDF) 6 Page - STMicroelectronics

номер детали STGD4H60DF
подробное описание детали  Trench gate field-stop 600 V, 4 A high speed H series IGBT in a DPAK package
PDF  18 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STGD4H60DF датащи(HTML) 6 Page - STMicroelectronics

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Figure 7. Forward bias safe operating area
GADG180120220859FSOA
10 1
10 0
10 -1
10 -2
10 0
10 1
10 2
IC
(A)
VCE (V)
tp= 1 µs
tp= 10 µs
tp= 100 µs
tp= 1 ms
Single pulse, TC = 25 °C,
TJ ≤ 175 °C, VGE = 15 V
Figure 8. Transfer characteristics
GADG170120221008TCH
12
8
4
0
4
6
8
10
IC
(A)
VGE (V)
VCE = 6 V
TJ= 25 °C
TJ= 175 °C
Figure 9. Diode VF vs forward current
GADG170120221008DVF
3.2
2.4
1.6
0.8
0.0
0
4
8
12
VF
(V)
IF (A)
TJ= 25 °C
TJ= -40 °C
TJ= 175 °C
Figure 10. Normalized VGE(th) vs junction temperature
IGBT180515EI62NVGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
0
50
100
150
V GE(th)
(norm.)
T J (°C)
IC = 250 μA, VCE = VGE
Figure 11. Normalized V(BR)CES vs junction temperature
IGBT150515EI62NVBR
1.1
1.0
0.9
-50
0
50
100
150
V BR(CES)
(norm.)
T J (°C)
I C = 2 mA
Figure 12. Capacitance variation
GADG170120221010CVR
10 3
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
C
(pF)
VCE (V)
f = 1 MHz
Cies
Coes
Cres
STGD4H60DF
Electrical characteristics (curves)
DS13901 - Rev 2
page 6/18



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