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STW81200 датащи(PDF) 11 Page - STMicroelectronics |
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STW81200 датащи(HTML) 11 Page - STMicroelectronics |
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11 / 58 page ![]() DocID025943 Rev 7 11/58 STW81200 Operating conditions 57 4 Operating conditions Table 4. Operating conditions Symbol Parameter Test conditions Min Typ Max Unit VCC Supply voltage pins #14, #17, #26 - 2.5 - 2.7 V Supply voltage (LDOs inputs) pins #9, #18, #28, #36 - 3.0 - 5.4 V Supply voltage pin #3, #16, #32 - 2.5 - 5 V ICC Current Consumption Pin #3, #16 and #32 supplied at 4.5 V DIV2 ON, Main Output only, 4 GHz VCO, max. performance -84 - mA Current Consumption Pin #3, #16 and #32 supplied at 2.6 V -50 - mA Current consumption other blocks an supplies at 2.6 V -110 - mA TA Operating ambient temperature - -40 - 85 °C TJ Maximum junction temperature - - - 125 °C ΘJA Junction to ambient package thermal resistance(1) Multilayer JEDEC board - 33 - °C/W ΘJB Junction to board package thermal resistance(1) Multilayer JEDEC board - 18 - °C/W ΘJC Junction to case package thermal resistance(1) Multilayer JEDEC board - 3 - °C/W ΨJB Thermal characterization parameter junction to board(1) Multilayer JEDEC board - 17 - °C/W ΨJT Thermal characterization parameter junction to top case(1) Multilayer JEDEC board - 0.3 - °C/W 1. Refer to JEDEC standard JESD 51-12 for a detailed description of the thermal resistances and thermal parameters. Data here presented are referring to a Multilayer board according to JEDEC standard. TJ = TA + ΘJA * Pdiss (in order to estimate TJ if ambient temperature TA and dissipated power Pdiss are known) TJ = TB + ΨJB * Pdiss (in order to estimate TJ if ambient temperature TB and dissipated power Pdiss are known) TJ = TT + ΨJT * Pdiss (in order to estimate TJ if ambient temperature TT and dissipated power Pdiss are known) |
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