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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST72344S2 датащи(PDF) 31 Page - STMicroelectronics |
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ST72344S2 датащи(HTML) 31 Page - STMicroelectronics |
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31 / 247 page  ST72344xx, ST2345xx Data EEPROM Doc ID 12321 Rev 6 31/247 5 Data EEPROM 5.1 Introduction The electrically erasable programmable read only memory can be used as a non-volatile backup for storing data. Using the EEPROM requires a basic access protocol described in this chapter. 5.2 Main features ● Up to 32 bytes programmed in the same cycle ● EEPROM mono-voltage (charge pump) ● Chained erase and programming cycles ● Internal control of the global programming cycle duration ● Wait mode management ● Readout protection Figure 7. EEPROM block diagram 5.3 Memory access The Data EEPROM memory read/write access modes are controlled by the E2LAT bit of the EEPROM Control/Status register (EECSR). The flowchart in Figure 8 describes these different memory access modes. EECSR HIGH VOLTAGE PUMP 0 E2LAT 0 0 0 0 0 E2PGM EEPROM MEMORY MATRIX (1 ROW = 32 x 8 BITS) ADDRESS DECODER DATA MULTIPLEXER 32 x 8 BITS DATA LATCHES ROW DECODER DATA BUS 4 4 4 128 128 ADDRESS BUS |
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