SST49LF080A datasheet(28/50 Pages) MICROCHIP

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DS20005086B

11/14

8 Mbit LPC Flash

SST49LF080A

Data Sheet

DC Characteristics

Table 14: DC Operating Characteristics (All Interfaces)

Symbol Parameter

Limits

Test Conditions

Min

Max

Units

IDD1

1. IDD active while a Read or Write (Program or Erase) operation is in progress.

Active VDD Current

LCLK (LPC mode) and Address Input (PP

mode)

=VILT/VIHT

at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)

All other inputs=VIL or VIH

Read

All outputs = open, VDD=VDD Max

Write

See Note2

2. For PP Mode: OE# = WE# =

VIH; For LPC Mode:f=1/TRC min, LFRAME# = VIH, CE# = VIL.

ISB

Standby VDD Current

(LPC Interface)

100

µA

LCLK (LPC mode) and Address Input (PP

mode)

=VILT/VIHT

at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)

LFRAME#=0.9 VDD, f=33 MHz, CE#=0.9 VDD,

VDD=VDD Max, All other inputs  0.9 VDD or  0.1

VDD

IRY3

3. The device is in Ready mode when no activity is on the LPC bus.

Ready Mode VDD Cur-

rent

(LPC Interface)

LCLK (LPC mode) and Address Input (PP

mode)

=VILT/VIHT

at f=33 MHz (LPC mode) or 1/TRC min (PP Mode)

LFRAME#=VIL, f=33 MHz, VDD=VDD Max

All other inputs

 0.9 V

DD or  0.1 VDD

Input Current for Mode

and ID[3:0] pins

200

µA

VIN=GND to VDD,VDD=VDD Max

ILI

Input Leakage Current

µA

VIN=GND to VDD,VDD=VDD Max

ILO

Output Leakage Cur-

rent

1µA

VOUT=GND to VDD,VDD=VDD Max

VIHI

INIT# Input High Volt-

age

1.1

VDD+0.

VVDD=VDD Max

VILI

INIT# Input Low Volt-

age

-0.5

0.4

VDD=VDD Min

VIL

Input Low Voltage

-0.5

0.3 VDD

VVDD=VDD Min

VIH

Input High Voltage

0.5

VDD

VDD+0.

VVDD=VDD Max

VOL

Output Low Voltage

0.1 VDD

VIOL=1500 µA, VDD=VDD Min

VOH

Output High Voltage

0.9

VDD

VIOH=-500 µA, VDD=VDD Min

T14.0 25026

Table 15: Recommended System Power-up Timings

Symbol

Parameter

Minimum

Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this

parameter

Power-up to Read Operation

100

µs

TPU-WRITE1

Power-up to Write Operation

100

µs

T15.0 25026

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