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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L081CB датащи(PDF) 77 Page - STMicroelectronics |
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STM32L081CB датащи(HTML) 77 Page - STMicroelectronics |
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77 / 110 page  DocID027513 Rev 4 77/110 STM32L081xx Electrical characteristics 95 6.3.13 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 53 are derived from tests performed under the conditions summarized in Table 20. All I/Os are CMOS and TTL compliant. Table 53. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage TC, FT, FTf, RST I/Os - - 0.3VDD V BOOT0 pin - - 0.14VDD(1) VIH Input high level voltage All I/Os 0.7 VDD -- Vhys I/O Schmitt trigger voltage hysteresis (2) Standard I/Os - 10% VDD(3) - BOOT0 pin - 0.01 - Ilkg Input leakage current (4) VSS VIN VDD All I/Os except for PA11, PA12, BOOT0 and FTf I/Os -- ±50 nA VSS VIN VDD, PA11 and PA12 I/Os - - -50/+250 VSS VIN VDD FTf I/Os - - ±100 VDDVIN 5 V All I/Os except for PA11, PA12, BOOT0 and FTf I/Os - - 200 nA VDDVIN 5 V FTf I/Os - - 500 VDDVIN 5 V PA11, PA12 and BOOT0 -- 10 µA RPU Weak pull-up equivalent resistor(5) VIN VSS 30 45 60 k RPD Weak pull-down equivalent resistor(5) VIN VDD 30 45 60 k CIO I/O pin capacitance - - 5 - pF 1. Guaranteed by characterization. 2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization results. 3. With a minimum of 200 mV. Guaranteed by characterization results. 4. The max. value may be exceeded if negative current is injected on adjacent pins. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order). |
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