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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L081CB датащи(PDF) 52 Page - STMicroelectronics |
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STM32L081CB датащи(HTML) 52 Page - STMicroelectronics |
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52 / 110 page  Electrical characteristics STM32L081xx 52/110 DocID027513 Rev 4 Figure 12. IDD vs VDD, at TA= 25/55/85/105 °C, Run mode, code running from Flash memory, Range 2, HSI16, 1WS Table 26. Current consumption in Run mode, code with data processing running from RAM Symbol Parameter Condition fHCLK (MHz) Typ Max(1) Unit IDD (Run from RAM) Supply current in Run mode code executed from RAM, Flash memory switched off fHSE = fHCLK up to 16 MHz included, fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range3, Vcore=1.2 V VOS[1:0]=11 1175 230 µA 2315 360 4570 630 Range2, Vcore=1.5 V VOS[1:0]=10 40,71 0,78 mA 81,35 1,6 16 2,7 3 Range1, Vcore=1.8 V VOS[1:0]=01 81,7 1,9 16 3,2 3,7 32 6,65 7,1 MSI clock Range3, Vcore=1.2 V VOS[1:0]=11 0,065 38 98 µA 0,524 105 160 4,2 615 710 HSI clock source (16 MHz) Range2, Vcore=1.5 V VOS[1:0]=10 16 2,85 3 mA Range1, Vcore=1.8 V VOS[1:0]=01 32 6,85 7,3 1. Guaranteed by characterization results at 125 °C, unless otherwise specified. |
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