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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PC87365 датащи(PDF) 200 Page - National Semiconductor (TI) |
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PC87365 датащи(HTML) 200 Page - National Semiconductor (TI) |
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200 / 215 page  12.0 Device Characteristics (Continued) 200 www.national.com 12.1.4 Power Consumption under Recommended Operating Conditions 12.2 DC CHARACTERISTICS OF PINS, BY I/O BUFFER TYPES The following tables summarize the DC characteristics of all device pins described in the Signal/Pin Connection and De- scription chapter. The characteristics describe the general I/O buffer types defined in Table 1. For exceptions, refer to Sec- tion 12.2.15 on page 203. The DC characteristics of the system interface meet the PCI2.1 3.3V DC signaling. 12.2.1 Input, CMOS Compatible Symbol: INC 12.2.2 Input, PCI 3.3V Symbol: INPCI 12.2.3 Input, SMBus Compatible Symbol: INSM Symbol Parameter Conditions Typ Max Unit ICC VDD Average Main Supply Current VIL = 0.5V, VIH = 2.4V No Load 32 50 mA ICCLP VDD Quiescent Main Supply Current in Low Power Mode VIL =VSS,VIH =VDD No Load 1.3 1.7 mA IASB AVDD Average Main Supply Current TBD TBD mA ISB VSB Average Main Supply Current VIL = 0.5V, VIH = 2.4V No Load 15 mA ISBLP VSB Quiescent Main Supply Current in Low Power Mode VIL =VSS,VIH =VSB No Load 3mA IBAT VBAT Battery Supply Current VDD,VSB =0V, VBAT =3V 250 nA Symbol Parameter Conditions Min Max Unit VIH Input High Voltage 0.7 VDD 5.51 1. Not tested. Guaranteed by design. V VIL Input Low Voltage −0.51 0.3 VDD V IIL Input Leakage Current VIN =VDD 50 nA VIN =VSS −50 nA Symbol Parameter Conditions Min Max Unit VIH Input High Voltage 0.5VDD VDD + 0.5 V VIL Input Low Voltage −0.5 0.3 VDD V lIL 1 1. Input leakage currents include hi-Z output leakage for all bi-directional buffers with TRI-STATE out- puts. Input Leakage Current 0<Vin <VDD ±10 µA Symbol Parameter Conditions Min Max Unit VIH Input High Voltage 1.4 5.51 V |
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