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TMS320VC5509 датащи(PDF) 34 Page - Texas Instruments |
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TMS320VC5509 датащи(HTML) 34 Page - Texas Instruments |
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34 / 122 page ![]() Functional Overview 34 April 2001 − Revised September 2004 SPRS163G 3.1.5.1 PGE Package Memory Map The PGE package features 14 address bits representing 16K-byte linear address for asynchronous memories per CE space. Due to address row/column multiplexing, address reach for SDRAM devices is 4M bytes for each CE space. The largest SDRAM device that can be used with the 5509 in a PGE package is 128M-bit SDRAM. 000000 DARAM / HPI Access (32K − 192) Bytes 008000 DARAM‡ 32K Bytes 010000 SARAM§ 192K Bytes External¶ − CE0 040000 400000 800000 C00000 FF0000 FF8000 32K Bytes FFC000 (if SROM=0 & MPNMC=0) 16K Bytes 16K Bytes FFFFFF External¶ − CE1 External¶ − CE2 External¶ − CE3 Block Size Byte Address (Hex)† SROM|| (if MPNMC=0) ROM|| (if MPNMC=0) ROM|| (if MPNMC=1) External¶ − CE3 (if MPNMC=1) External¶ − CE3 (if MPNMC=1) External¶ − CE3 16K Bytes − Asynchronous 4M Bytes − SDRAM (MPNMC = 1) 4M Bytes − 64K Bytes if internal ROM selected (MPNMC = 0) 16K Bytes − Asynchronous 4M Bytes − SDRAM 16K Bytes − Asynchronous 4M Bytes − SDRAM 16K Bytes − Asynchronous 4M Bytes − 256K Bytes SDRAM# Memory Blocks † Address shown represents the first byte address in each block. ‡ Dual-access RAM (DARAM): two accesses per cycle per block, 8 blocks of 8K bytes. § Single-access RAM (SARAM): one access per cycle per block, 24 blocks of 8K bytes. ¶ External memory spaces are selected by the chip-enable signal shown (CE[0:3]). Supported memory types include: asynchronous static RAM (SRAM) and synchronous DRAM (SDRAM). # The minus 256K bytes consists of 32K-byte DARAM/HPI access, 32K-byte DARAM, and 192K-byte SARAM. || Read-only memory (ROM): one access every two cycles, two blocks of 32K bytes. 0000C0 MMR (Reserved) Figure 3−3. TMS320VC5509 Memory Map (PGE Package) |
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