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AN2014 датащи(PDF) 14 Page - STMicroelectronics |
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AN2014 датащи(HTML) 14 Page - STMicroelectronics |
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14 / 65 page ![]() EEPROM cell and memory array architecture AN2014 14/65 DocID10701 Rev 10 1.2.2 Decoding architecture To address a single byte in a full array, decoding circuits are necessary. One logical address is associated with one byte location. The address bits are inserted serially into a Shift Register. Then, with parallel output, the decoding structures receive all of the bits at the same time, to perform the decoding and addressing. The row decoder decodes and brings correct biasing to a single row line. As one or more bytes of the same row can be programmed at the same time, the column decoder decodes one or more column(s), and a RAM buffer memorizes the data to write, and enables the right path for Cg-line and Bit-line biasing. Figure 11. Decoding block diagram 1.2.3 Intrinsic electrical stress induced by programming Whatever the data value to be programmed and whether the request is made by byte or page, all high-voltage circuits(a) are stressed by HiV (a high voltage ranging between 15 and 18V). In particular, the internal nodes of the charge pump can see voltages equal to HiV + VCC (that is as much as 23 V). All circuits that receive and carry HiV (ramp generator, regulation, decoding, latches) are submitted to higher stress than active low voltage transistors. The overall time during which the high voltage circuits are active is relatively short compared to the product lifetime (10ms x 1Mcycles = 10000 seconds => less than 3 hours). A standard ST EEPROM device includes a few hundred high voltage transistors, for low memory density products (1Kbit). This number can rise to a few thousand for high memory density products (1Mbit). AI10225 Address Shift Register Column Decoder Bit-line and Cg-line Latches: RAM Buffer Row Decoder Array Cg-lines and Bit-lines Row-lines Read/Write Analog Voltages Serial Input MSB Address Bits LSB Address Bits a. The high voltage is required to Erase and program an EEPROM cell. |
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