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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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28F020 датащи(PDF) 23 Page - Intel Corporation |
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28F020 датащи(HTML) 23 Page - Intel Corporation |
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23 / 38 page  E 28F020 23 4.6 DC Characteristics—TTL/NMOS Compatible—Extended Temperature Products (Continued) Limits Symbol Parameter Notes Min Typ(3) Max Unit Test Conditions ICC3 VCC Erase Current 1, 2 5.0 30 mA Erasure in Progress ICC4 VCC Program Verify Current 1, 2 5.0 30 mA VPP = VPPH Program Verify in Progress ICC5 VCC Erase Verify Current 1, 2 5.0 30 mA VPP = VPPH Erase Verify in Progress IPPS VPP Leakage Current 1 ±10 µA VPP ≤ VCC IPP1 VPP Read Current, ID Current or Standby Current 1 90 200 µA VPP > VCC ±10 VPP ≤ VCC IPP2 VPP Programming Current 1, 2 8 30 mA VPP = VPPH Programming in Progress IPP3 VPP Erase Current 1, 2 10 30 mA VPP = VPPH IPP4 VPP Program Verify Current 1, 2 2.0 5.0 mA VPP = VPPH Program Verify in Progress IPP5 VPP Erase Verify Current 1, 2 2.0 5.0 mA VPP = VPPH Erase Verify in Progress VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 2.0 VCC + 0.5 V VOL Output Low Voltage 0.45 V VCC = VCC Min IOH = –2.5 mA VOH1 Output High Voltage 2.4 V VCC = VCC Min IOL = 5.8 mA |
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