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28F020 датащи(PDF) 20 Page - Intel Corporation

номер детали 28F020
подробное описание детали  28F020 2048K (256K X 8) CMOS FLASH MEMORY
PDF  38 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

28F020 датащи(HTML) 20 Page - Intel Corporation

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28F020
E
20
4.4
DC Characteristics—TTL/NMOS Compatible—Commercial Products
(Continued)
Limits
Symbol
Parameter
Notes
Min
Typ(3)
Max
Unit
Test Conditions
VIL
Input Low
Voltage
–0.5
0.8
V
VIH
Input High
Voltage
2.0
VCC
+ 0.5
V
VOL
Output Low
Voltage
0.45
V
VCC = VCC Min
IOL = 5.8 mA
VOH1
Output High
Voltage
2.4
V
VCC = VCC Min
IOH = –2.5 mA
VID
A9 Intelligent
Identifier
Voltage
11.50
13.00
V
IID
A9 Intelligent
Identifier
Current
1, 2
90
200
µA
A9 = VID
VPPL
VPP during
Read-Only
Operations
0.00
6.5
V
NOTE:
Erase/Program
are Inhibited
when VPP = VPPL
VPPH
VPP during
Read/Write
Operations
11.40
12.60
V
VLKO
VCC
Erase/Write
Lock Voltage
2.5
V
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0 V, VPP = 12.0 V, T = 25 °C. These currents are
valid for all product versions (packages and speeds).
2.
Not 100% tested: Characterization data available.
3.
“Typicals” are not guaranteed, but based on a limited number of samples from production lots.
4.5
DC Characteristics—CMOS Compatible—Commercial Products
Limits
Symbol
Parameter
Notes
Min
Typ(3)
Max
Unit
Test Conditions
ILI
Input Leakage
Current
1
±1.0
µA
VCC = VCC Max
VIN = VCC or VSS
ILO
Output Leakage
Current
1
±10
µA
VCC = VCC Max
VOUT = VCC or VSS
ICCS
VCC Standby
Current
1
50
100
µA
VCC = VCC Max
CE# = VCC ±0.2 V



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