E

December 1997

Order Number: 290245-009

Microprocessor/Microcontroller

Compatible Write Interface

through EPI Processing

Experience

(See Packaging Spec., Order #231369)

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after sale. The 28F020 increases

memory flexibility, while contributing to time and cost savings.

The 28F020 is a 2048-kilobit nonvolatile memory organized as 262,144 bytes of eight bits. Intel’s 28F020 is

offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to

JEDEC standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)

process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field

28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse

programming and quick-erase algorithms.

Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,

low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance

for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates

into power savings when the device is deselected. Finally, the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA

With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the

highest levels of quality, reliability, and cost-effectiveness.

28F020 2048K (256K X 8) CMOS

FLASH MEMORY