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28F020 датащи(PDF) 16 Page - Intel Corporation

номер детали 28F020
подробное описание детали  28F020 2048K (256K X 8) CMOS FLASH MEMORY
PDF  38 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

28F020 датащи(HTML) 16 Page - Intel Corporation

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28F020
E
16
3.0 DESIGN CONSIDERATIONS
3.1
Two-Line Output Control
Flash memories are often used in larger memory
arrays. Intel provides two read control inputs to
accommodate multiple memory connections. Two-
line control provides for:
a.
the lowest possible memory power dissipation
and,
b.
complete assurance that output bus contention
will not occur.
To efficiently use these two control inputs, an
address decoder output should drive chip enable,
while the system’s read signal controls all flash
memories
and other
parallel
memories.
This
assures that only enabled memory devices have
active outputs, while deselected devices maintain
the low power standby condition.
3.2
Power Supply Decoupling
Flash
memory
power-switching
characteristics
require
careful
device
decoupling.
System
designers are interested in three supply current
(ICC) issues—standby, active, and transient current
peaks produced by falling and rising edges of chip
enable. The capacitive and inductive loads on the
device outputs determine the magnitudes of these
peaks.
Two-line control and proper decoupling capacitor
selection will suppress transient voltage peaks.
Each device should have a 0.1 µF ceramic
capacitor connected between VCC and VSS, and
between VPP and VSS.
Place the high-frequency, low-inherent-inductance
capacitors as close as possible to the devices.
Also, for every eight devices, a 4.7 µF electrolytic
capacitor should be placed at the array’s power
supply connection, between VCC and VSS. The bulk
capacitor will overcome voltage slumps caused by
printed circuit board trace inductance, and will
supply charge to the smaller capacitors as needed.
3.3
VPP Trace on Printed Circuit
Boards
Programming flash memories, while they reside in
the target system, requires that the printed circuit
board designer pay attention to the VPP power
supply trace. The VPP pin supplies the memory cell
current for programming. Use similar trace widths
and layout considerations given the VCC power bus.
Adequate VPP supply traces and decoupling will
decrease VPP voltage spikes and overshoots.
3.4
Power-Up/Down Protection
The 28F020 is designed to offer protection against
accidental erasure or programming during power
transitions.
Upon
power-up,
the
28F020
is
indifferent as to which power supply, VPP or VCC,
powers up first. Power supply sequencing is not
required. Internal circuitry in the 28F020 ensures
that the command register is reset to the read
mode on power-up.
A system designer must guard against active
writes for VCC voltages above VLKO when VPP is
active. Since both WE# and CE# must be low for a
command write, driving either to VIH will inhibit
writes. The control register architecture provides an
added level of protection since alteration of
memory contents only occurs after successful
completion of the two-step command sequences.
3.5
28F020 Power Dissipation
When designing portable systems, designers must
consider battery power consumption not only during
device operation, but also for data retention during
system idle time. Flash nonvolatility increases the
usable battery life of your system because the
28F020 does not consume any power to retain
code or data when the system is off. Table 4
illustrates the power dissipated when updating the
28F020.



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