28F020 datasheet(22/38 Pages) INTEL

номер детали	28F020

подробное описание детали	28F020 2048K (256K X 8) CMOS FLASH MEMORY

PDF	38 Pages

Scroll/Zoom	100%

производитель	INTEL [Intel Corporation]

домашняя страница	http://www.intel.com

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22 / 38 page

28F020

4.5

DC Characteristics—CMOS Compatible—Commercial Products (Continued)

Limits

Symbol

Parameter

Notes

Min

Typ(3)

Max

Unit

Test Conditions

VOH1

Output High

Voltage

0.85

VCC

VVCC = VCC Min

IOH = –2.5 mA

VOH2

VCC –

0.4

VCC = VCC Min

IOH = –100 µA

VID

A9 Intelligent

Identifier Voltage

11.50

13.00

IID

A9 Intelligent

Identifier Current

1, 2

200

µA

A9 = VID

VPPL

VPP during

Read-Only

Operations

0.00

6.5

NOTE:

Erase/Programs

are Inhibited when

VPP = VPPL

VPPH

VPP during

Read/Write

Operations

11.40

12.60

VLKO

VCC Erase/Write

Lock Voltage

2.5

4.6

DC Characteristics—TTL/NMOS Compatible—Extended Temperature

Products

Limits

Symbol

Parameter

Notes

Min

Typ(3)

Max

Unit

Test Conditions

ILI

Input Leakage

Current

±1.0

µA

VCC = VCC Max

VIN = VCC or VSS

ILO

Output Leakage

Current

±10

µA

VCC= VCC Max

VOUT = VCC or

VSS

ICCS

VCC Standby

Current

0.3

1.0

VCC = VCC Max

CE# = VIH

ICC1

VCC Active Read

Current

110

VCC = VCC Max

CE# = VIL

f = 6 MHz

IOUT = 0 mA

ICC2

VCC

Programming

Current

1, 2

1.0

Programming in

Progress

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