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28F016SA датащи(PDF) 47 Page - Intel Corporation |
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28F016SA датащи(HTML) 47 Page - Intel Corporation |
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47 / 55 page ![]() E 28F016SA 47 5.10 AC Characteristics for Page Buffer Write Operations: COMMERCIAL AND EXTENDED TEMPERATURE(1) (Continued) VCC = 5.0V ± 10%, 5.0V ± 5%, TA = 0 °C to +70°C, –40°C to +85°C Temp Commercial Commercial Comm/Ext Sym Parameter Speed –70 –80 –100 Unit VCC 5.0V ± 5% 5.0V ± 10% 5.0V ± 10% Notes Min Typ Max Min Typ Max Min Typ Max tAVAV Write Cycle Time 70 80 100 ns tELWL CE# Setup to WE# Going Low 000 ns tAVWL Address Setup to WE# Going Low 3 000 ns tDVWH Data Setup to WE# Going High 2 505050 ns tWLWH WE# Pulse Width 40 50 50 ns tWHDX Data Hold from WE# High 2 000 ns tWHAX Address Hold from WE# High 2 101010 ns tWHEH CE# Hold from WE# High 10 10 10 ns tWHWL WE# Pulse Width High 30 30 50 ns tGHWL Read Recovery before Write 000 ns tWHGL Write Recovery before Read 60 65 80 ns NOTES: CE# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high. 1. These are WE#–controlled write timings, equivalent CE#–controlled write timings apply. 2. Sampled, but not 100% tested. 3. Address must be valid during the entire WE# low pulse or the entire CE# low pulse for CE#-controlled writes. |
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