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28F016SA датащи(PDF) 38 Page - Intel Corporation

номер детали 28F016SA
подробное описание детали  28F016SA 16-MBIT (1 MBIT X 16, 2 MBIT X 8)FlashFile MEMORY
PDF  55 Pages
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производитель  INTEL [Intel Corporation]
домашняя страница  http://www.intel.com
Logo INTEL - Intel Corporation

28F016SA датащи(HTML) 38 Page - Intel Corporation

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28F016SA
E
38
5.8
AC Characteristics for WE#–Controlled Command Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE(1)
VCC = 3.3V ± 10%, TA = 0
°C to +70°C, –40°C to +85°C
Temp
Commercial
Comm/Extended
Sym
Parameter
Notes
Min
Typ
Max
Min
Typ
Max
Units
tAVAV
Write Cycle Time
120
150
ns
tVPWH
VPP Setup to WE# Going High
3
100
100
ns
tPHEL
RP# Setup to CE# Going Low
480
480
ns
tELWL
CE# Setup to WE# Going Low
10
10
ns
tAVWH
Address Setup to WE# Going
High
2,6
75
75
ns
tDVWH
Data Setup to WE# Going
High
2,6
75
75
ns
tWLWH
WE# Pulse Width
75
75
ns
tWHDX
Data Hold from WE# High
2
10
10
ns
tWHAX
Address Hold from WE# High
2
10
10
ns
tWHEH
CE# Hold from WE# High
10
10
ns
tWHWL
WE# Pulse Width High
45
75
ns
tGHWL
Read Recovery before Write
0
0
ns
tWHRL
WE# High to RY/BY# Going
Low
100
100
ns
tRHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
30
0
ns
tPHWL
RP# High Recovery to WE#
Going Low
11
µs
tWHGL
Write Recovery before Read
95
120
ns
tQVVL
VPP Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
00
µs
tWHQV1
Duration of Word/Byte
Program Operation
4,5
5
9
Note
7
5
9
Note
7
µs
tWHQV2
Duration of Block Erase
Operation
4
0.3
10
0.3
10
sec



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