28F016SA datasheet(44/55 Pages) INTEL

44 / 55 page

28F016SA

5.9

AC Characteristics for CE#–Controlled Command Write Operations:

COMMERCIAL AND EXTENDED TEMPERATURE(1) (Continued)

VCC = 5.0 to 10%, 5.0V ± 5%, TA = 0

°C to +70°C, –40°C to +85°C

Temp

Commercial

Comm/Ext

Versions

VCC ± 5%

28F016SA-070

Unit

VCC ± 10%

28F016SA-080

28F016SA-100

Sym

Parameter

Notes

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

tRHPL

RP# Hold from

Valid Status

GSR, BSR)

Data and

RY/BY# High

tPHEL

RP# High

Recovery to

CE# Going Low

µs

tEHGL

Write Recovery

before Read

µs

tQVVL

VPP Hold from

Valid Status

GSR, BSR)

Data and

RY/BY# High

µs

tEHQV1 Duration of

Word/Byte

Program

Operation

4,5

4.5

Note

4.5

Note

4.5

Note

µs

tEHQV2 Duration of

Block Erase

Operation

0.3

sec

NOTES:

CE# is defined as the latter of CE0# or CE1# going low or the first of CE0# or CE1# going high.

Read timings during data program and block erase are the same as for normal read.

Refer to command definition tables for valid address and data values.

Sampled, but not 100% tested.

Data program/block erase durations are measured to valid Status Register data.

Word/byte program operations are typically performed with 1 programming pulse.

Address and data are latched on the rising edge of CE# for all command write operations.

This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel sales office

for more information.

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