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LP55281TL/NOPB датащи(PDF) 27 Page - Texas Instruments

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номер детали LP55281TL/NOPB
подробное описание детали  Quad RGB Driver
PDF  35 Pages
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LP55281TL/NOPB датащи(HTML) 27 Page - Texas Instruments

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LP55281
www.ti.com
SNVS458B – JUNE 2007 – REVISED JUNE 2007
OUTPUT DIODE, D1:
A Schottky diode should be used for the output diode. To maintain high efficiency the average current rating of
the schottky diode shoulde be larger than the peak inductor current (1A). Schottky diodes with a low forward drop
and fast switching speeds are ideal for increasing efficiency in portable applications. Choose a reverse
breakdown of the schottky diode larger than the output voltage. Do not use ordinary rectifier diodes, since slow
switching speeds and long recovery times cause the efficiency and the load regulation to suffer.
INDUCTOR, L:
The LP55281's high switching frequency enables the use of the small surface mount inductor. A 4.7 µH shielded
inductor is suggested for 2 MHz operation, 10 µH should be used at 1 MHz. The inductor should have a
saturation current rating higher than the peak current it will experience during circuit operation (~1A). Less than
300 m
Ω ESR is suggested for high efficiency. Open core inductors cause flux linkage with circuit components
and interfere with the normal operation of the circuit. This should be avoided. For high efficiency, choose an
inductor with a high frequency core material such as ferrite to reduce the core losses. To minimize radiated
noise, use a toroid, pot core or shielded core inductor. The inductor should be connected to the SW pin as close
to the IC as possible. Recommended inductors are LPS3015 and LPS4012 from Coilcraft and VLF4012 from
TDK.
LIST OF RECOMMENDED EXTERNAL COMPONENTS
Symbol
Symbol explanation
Value
Unit
Type
CVDD1
C between VDD1 and GND
100
nF
Ceramic, X7R/X5R
CVDD2
C between VDD2 and GND
100
nF
Ceramic, X7R/X5R
CVDDIO
C between VDDIO and GND
100
nF
Ceramic, X7R/X5R
CVDDA
C between VDDA and GND
1
µF
Ceramic, X7R/X5R
COUT
C between FB and GND
10
µF
Ceramic, X7R/X5R
CIN
C between battery voltage and GND
10
µF
Ceramic, X7R/X5R
LBOOST
L between SW and VBAT at 2 MHz
4.7
µH
Shielded, low ESR, ISAT 1A
CVREF
C between VREF and GND
100
nF
Ceramic, X7R
CVDDIO
C between VDDIO and GND
100
nF
Ceramic, X7R
RRGB
R between IRGB and GND
8.2
k
±1%
RRT
R between IRT and GND
82
k
±1%
D1
Rectifying Diode (Vf @ maxload)
0.3
V
Schottky diode
CASE
C between Audio input and ASEx
100
nF
Ceramic, X7R/X5R
LEDs
User defined
LP55281 Registers
Following table summarizes the registers and their default values
Address
Register
D7
D6
D5
D4
D3
D2
D1
D0
00h
RED1
R1 - IPLS[7:6]
R1_PWM[5:0]
0
0
0
0
0
0
0
0
01h
GREEN1
G1 - IPLS[7:6]
G1_PWM[5:0]
0
0
0
0
0
0
0
0
02h
BLUE1
B1 - IPLS[7:6]
B1_PWM[5:0]
0
0
0
0
0
0
0
0
03h
RED2
R2 - IPLS[7:6]
R2_PWM[5:0]
0
0
0
0
0
0
0
0
04h
GREEN2
G2 - IPLS[7:6]
G2_PWM[5:0]
0
0
0
0
0
0
0
0
05h
BLUE2
B2 - IPLS[7:6]
B2_PWM[5:0]
0
0
0
0
0
0
0
0
Copyright © 2007, Texas Instruments Incorporated
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