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LP55281TL/NOPB датащи(PDF) 27 Page - Texas Instruments |
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LP55281TL/NOPB датащи(HTML) 27 Page - Texas Instruments |
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27 / 35 page ![]() LP55281 www.ti.com SNVS458B – JUNE 2007 – REVISED JUNE 2007 OUTPUT DIODE, D1: A Schottky diode should be used for the output diode. To maintain high efficiency the average current rating of the schottky diode shoulde be larger than the peak inductor current (1A). Schottky diodes with a low forward drop and fast switching speeds are ideal for increasing efficiency in portable applications. Choose a reverse breakdown of the schottky diode larger than the output voltage. Do not use ordinary rectifier diodes, since slow switching speeds and long recovery times cause the efficiency and the load regulation to suffer. INDUCTOR, L: The LP55281's high switching frequency enables the use of the small surface mount inductor. A 4.7 µH shielded inductor is suggested for 2 MHz operation, 10 µH should be used at 1 MHz. The inductor should have a saturation current rating higher than the peak current it will experience during circuit operation (~1A). Less than 300 m Ω ESR is suggested for high efficiency. Open core inductors cause flux linkage with circuit components and interfere with the normal operation of the circuit. This should be avoided. For high efficiency, choose an inductor with a high frequency core material such as ferrite to reduce the core losses. To minimize radiated noise, use a toroid, pot core or shielded core inductor. The inductor should be connected to the SW pin as close to the IC as possible. Recommended inductors are LPS3015 and LPS4012 from Coilcraft and VLF4012 from TDK. LIST OF RECOMMENDED EXTERNAL COMPONENTS Symbol Symbol explanation Value Unit Type CVDD1 C between VDD1 and GND 100 nF Ceramic, X7R/X5R CVDD2 C between VDD2 and GND 100 nF Ceramic, X7R/X5R CVDDIO C between VDDIO and GND 100 nF Ceramic, X7R/X5R CVDDA C between VDDA and GND 1 µF Ceramic, X7R/X5R COUT C between FB and GND 10 µF Ceramic, X7R/X5R CIN C between battery voltage and GND 10 µF Ceramic, X7R/X5R LBOOST L between SW and VBAT at 2 MHz 4.7 µH Shielded, low ESR, ISAT 1A CVREF C between VREF and GND 100 nF Ceramic, X7R CVDDIO C between VDDIO and GND 100 nF Ceramic, X7R RRGB R between IRGB and GND 8.2 k Ω ±1% RRT R between IRT and GND 82 k Ω ±1% D1 Rectifying Diode (Vf @ maxload) 0.3 V Schottky diode CASE C between Audio input and ASEx 100 nF Ceramic, X7R/X5R LEDs User defined LP55281 Registers Following table summarizes the registers and their default values Address Register D7 D6 D5 D4 D3 D2 D1 D0 00h RED1 R1 - IPLS[7:6] R1_PWM[5:0] 0 0 0 0 0 0 0 0 01h GREEN1 G1 - IPLS[7:6] G1_PWM[5:0] 0 0 0 0 0 0 0 0 02h BLUE1 B1 - IPLS[7:6] B1_PWM[5:0] 0 0 0 0 0 0 0 0 03h RED2 R2 - IPLS[7:6] R2_PWM[5:0] 0 0 0 0 0 0 0 0 04h GREEN2 G2 - IPLS[7:6] G2_PWM[5:0] 0 0 0 0 0 0 0 0 05h BLUE2 B2 - IPLS[7:6] B2_PWM[5:0] 0 0 0 0 0 0 0 0 Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 27 Product Folder Links: LP55281 |
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