AT25DF161_13 datasheet(2/52 Pages) ETC2

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AT25DF161

Description

The AT25DF161 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer

based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution.

The flexible erase architecture of the AT25DF161, with its erase granularity as small as 4-Kbytes, makes it ideal for data

storage as well, eliminating the need for additional data storage EEPROM devices.

The physical sectoring and the erase block sizes of the AT25DF161 have been optimized to meet the needs of today's

code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can

be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in

their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase

Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and

data storage segments to be added while still maintaining the same overall device density.

The AT25DF161 also offers a sophisticated method for protecting individual sectors against erroneous or malicious

program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can

unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely

protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in

applications where data storage segments need to be modified without running the risk of errant modifications to the

program code segments. In addition to individual sector protection capabilities, the AT25DF161 incorporates Global Protect

and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This

reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to

initial programming.

To take code and data protection to the next level, the AT25DF161 incorporates a sector lockdown mechanism that allows

any combination of individual 64-Kbyte sectors to be locked down and become permanently read-only. This addresses the

need of certain secure applications that require portions of the Flash memory array to be permanently protected against

malicious attempts at altering program code, data modules, security information, or encryption/decryption algorithms, keys,

and routines. The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for

purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage,

etc.

Specifically designed for use in 3V systems, the AT25DF161 supports read, program, and erase operations with a supply

voltage range of 2.3V to 3.6V or 2.7V to 3.6V. No separate voltage is required for programming and erasing.

3687H–DFLASH–5/2013

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