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STM8L151F3P6 датащи(PDF) 51 Page - STMicroelectronics

номер детали STM8L151F3P6
подробное описание детали  8-bit ultralow power MCU, up to 8 KB Flash, up to 256 B data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  112 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM8L151F3P6 датащи(HTML) 51 Page - STMicroelectronics

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STM8L151x2, STM8L151x3
Electrical parameters
Doc ID 018780 Rev 4
51/112
Table 12.
Current characteristics
Symbol
Ratings
Max.
Unit
IVDD
Total current into VDD power line (source)
80
mA
IVSS
Total current out of VSS ground line (sink)
80
IIO
Output current sunk by IR_TIM pin (with high sink LED driver
capability)
80
Output current sunk by any other I/O and control pin
25
Output current sourced by any I/Os and control pin
- 25
IINJ(PIN)
Injected current on true open-drain pins (PC0 and PC1)(1)
- 5 / +0
mA
Injected current on 3.6 V tolerant pins (1)
- 5 / +0
Injected current on any other pin (1)
1.
A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 11. for maximum allowed input voltage values.
- 5 / +5
ΣIINJ(PIN)
Total injected current (sum of all I/O and control pins) (2)
2.
When several inputs are submitted to a current injection, the maximum
ΣIINJ(PIN) is the absolute sum of the
positive and negative injected currents (instantaneous values).
± 25
Table 13.
Thermal characteristics
Symbol
Ratings
Value
Unit
TSTG
Storage temperature range
-65 to +150
° C
TJ
Maximum junction temperature
150



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