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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151F3P6 датащи(PDF) 89 Page - STMicroelectronics |
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STM8L151F3P6 датащи(HTML) 89 Page - STMicroelectronics |
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89 / 112 page  STM8L151x2, STM8L151x3 Electrical parameters Doc ID 018780 Rev 4 89/112 tS Sampling time VAIN on PF0 fast channel VDDA < 2.4 V 0.43(4)(5) µs VAIN on PF0 fast channel 2.4 V ≤ VDDA≤ 3.6 V 0.22(4)(5) µs VAIN on slow channels VDDA < 2.4 V 0.86(4)(5) µs VAIN on slow channels 2.4 V ≤ VDDA≤ 3.6 V 0.41(4)(5) µs tconv 12-bit conversion time 12 + tS 1/fADC1 16 MHz 1(4) µs tWKUP Wakeup time from OFF state 3µs tIDLE (6) Time before a new conversion TA = +25 °C 1(7) s TA = +70 °C 20(7) ms TA = +125 °C 2(7) ms tVREFINT Internal reference voltage startup time refer to Table 41 ms 1. The current consumption through VREF is composed of two parameters: - one constant (max 300 µA) - one variable (max 400 µA), only during sampling time + 2 first conversion pulses. So, peak consumption is 300+400 = 700 µA and average consumption is 300 + [(4 sampling + 2) /16] x 400 = 450 µA at 1Msps 2. VREF- or VDDA must be tied to ground. 3. Guaranteed by design, not tested in production. 4. Minimum sampling and conversion time is reached for maximum Rext = 0.5 k Ω. 5. Value obtained for continuous conversion on fast channel. 6. The time between 2 conversions, or between ADC1 ON and the first conversion must be lower than tIDLE. 7. The tIDLE maximum value is ∞ on the “Z” revision code of the device. Table 45. ADC1 characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit |
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