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STM8L151F3P6 датащи(PDF) 69 Page - STMicroelectronics

номер детали STM8L151F3P6
подробное описание детали  8-bit ultralow power MCU, up to 8 KB Flash, up to 256 B data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  112 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM8L151F3P6 датащи(HTML) 69 Page - STMicroelectronics

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STM8L151x2, STM8L151x3
Electrical parameters
Doc ID 018780 Rev 4
69/112
Figure 18. Typical HSI frequency vs VDD
Low speed internal RC oscillator (LSI)
In the following table, data is based on characterization results, not tested in production.
Table 30.
LSI oscillator characteristics
Symbol
Parameter (1)
1.
VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified.
Conditions(1)
Min
Typ
Max
Unit
fLSI
Frequency
26
38
56
kHz
tsu(LSI)
LSI oscillator wakeup time
200(2)
2.
Guaranteed by design, not tested in production.
µs
IDD(LSI)
LSI oscillator frequency
drift(3)
3.
This is a deviation for an individual part, once the initial frequency has been measured.
0 °C
≤ TA ≤ 85 °C
-12
11
%
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
1.65
1.8
1.95
2.1
2.25
2.4
2.55
2.7
2.85
3
3.15
3.3
3.45
3.6
VDD [V]
-40°C
25°C
90°C
130°C



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