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STM8L151F3P6 датащи(PDF) 73 Page - STMicroelectronics

номер детали STM8L151F3P6
подробное описание детали  8-bit ultralow power MCU, up to 8 KB Flash, up to 256 B data EEPROM, RTC, timers, USART, I2C, SPI, ADC, comparators
PDF  112 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM8L151F3P6 датащи(HTML) 73 Page - STMicroelectronics

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STM8L151x2, STM8L151x3
Electrical parameters
Doc ID 018780 Rev 4
73/112
Table 34.
I/O static characteristics
Symbol
Parameter
Conditions(1)
Min
Typ
Max
Unit
VIL
Input low level voltage(2)
Input voltage on true open-drain
pins (PC0 and PC1)
VSS-0.3
0.3 x VDD
V
Input voltage on any other pin
VSS-0.3
0.3 x VDD
VIH
Input high level voltage (2)
Input voltage on true open-drain
pins (PC0 and PC1)
with VDD < 2 V
0.70 x VDD
5.2
V
Input voltage on true open-drain
pins (PC0 and PC1)
with VDD ≥ 2 V
5.5
Input voltage on any other pin
0.70 x VDD
VDD+0.3
Vhys
Schmitt trigger voltage
hysteresis (3)
I/Os
200
mV
True open drain I/Os
200
Ilkg
Input leakage current (4)
VSS≤ VIN≤ VDD
High sink I/Os
--
50 (5)
nA
VSS≤ VIN≤ VDD
True open drain I/Os
-
-
200(5)
VSS≤ VIN≤ VDD
PA0 with high sink LED driver
capability
-
-
200(5)
RPU
Weak pull-up equivalent
resistor(2)(6)
VIN=VSS
30
45
60
k
Ω
CIO
I/O pin capacitance
5
pF
1.
VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2.
Data based on characterization results, not tested in production.
3.
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4.
The max. value may be exceeded if negative current is injected on adjacent pins.
5.
Not tested in production.
6.
RPU pull-up equivalent resistor based on a resistive transistor(corresponding IPU current characteristics described in
Figure 23).



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