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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8L151F3P6 датащи(PDF) 93 Page - STMicroelectronics |
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STM8L151F3P6 датащи(HTML) 93 Page - STMicroelectronics |
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93 / 112 page  STM8L151x2, STM8L151x3 Electrical parameters Doc ID 018780 Rev 4 93/112 Figure 41. Max. dynamic current consumption on VREF+ supply pin during ADC conversion 7.3.13 EMC characteristics Susceptibility tests are performed on a sample basis during product characterization. Functional EMS (electromagnetic susceptibility) Based on a simple running application on the product (toggling 2 LEDs through I/O ports), the product is stressed by two electromagnetic events until a failure occurs (indicated by the LEDs). ● ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device until a functional disturbance occurs. This test conforms with the IEC 61000 standard. ● FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with the IEC 61000 standard. A device reset allows normal operations to be resumed. The test results are given in the table below based on the EMS levels and classes defined in application note AN1709. ADC clock Sampling (n cycles) Conversion (12 cycles) Iref+ 300μA 700μA MS18181V1 Table 49. RAIN max for fADC = 16 MHz tS (cycles) tS (µs) RAIN max (kohm) Slow channels Fast channels 2.4 V < VDDA < 3.6 V 1.8 V < VDDA < 2.4 V 2.4 V < VDDA < 3.3 V 1.8 V < VDDA < 2.4 V 4 0.25 Not allowed Not allowed 0.7 Not allowed 9 0.5625 0.8 Not allowed 2.0 1.0 16 1 2.0 0.8 4.0 3.0 24 1.5 3.0 1.8 6.0 4.5 48 3 6.8 4.0 15.0 10.0 96 6 15.0 10.0 30.0 20.0 192 12 32.0 25.0 50.0 40.0 384 24 50.0 50.0 50.0 50.0 |
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