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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PIC12F635ESS датащи(PDF) 175 Page - Microchip Technology |
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PIC12F635ESS датащи(HTML) 175 Page - Microchip Technology |
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175 / 234 page  © 2007 Microchip Technology Inc. DS41232D-page 173 PIC12F635/PIC16F636/639 15.5 DC Characteristics: PIC16F639-I (Industrial) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial Param No. Sym Characteristic Min Typ† Max Units Conditions D001 VDD Supply Voltage 2.0 — 3.6 V FOSC ≤ 10 MHz D001A VDDT Supply Voltage (AFE) 2.0 — 3.6 V Analog Front-End VDD voltage. Treated as VDD in this document. D002 VDR RAM Data Retention Voltage(1) 1.5* — — V Device in Sleep mode D003 VPOR VDD Start Voltage to ensure internal Power-on Reset signal —VSS —V See Section 12.3 “Power-on Reset” for details. D003A VPORT VDD Start Voltage (AFE) to ensure internal Power- on Reset signal — — 1.8 V Analog Front-End POR voltage. D004 SVDD VDD Rise Rate to ensure internal Power-on Reset signal 0.05* — — V/ms See Section 12.3 “Power-on Reset” for details. D005 VBOD Brown-out Reset 2.0 2.1 2.2 V D006 RM Turn-on Resistance or Modulation Transistor — 50 100 Ohm VDD = 3.0V D007 RPU Digital Input Pull-Up Resistor CS, SCLK 50 200 350 kOhm VDD = 3.6V D008 IAIL Analog Input Leakage Current LCX, LCY, LCZ LCCOM — — — — ±1 ±1 μA μA VDD = 3.6V, VSS ≤ VIN ≤ VDD, tested at Sleep mode * These parameters are characterized but not tested. † Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data. |
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